| PART |
Description |
Maker |
| DESC29-06AC |
HiPerFRED Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface HiPerFRED外延二极管ISOPLUS220电隔离背
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFRB24N50Q IXFR24N50Q IXFR26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
| IXGR24N60C |
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:24; Connector Shell Size:24; Connecting Termination:Crimp; Circular Shell Style:Right Angle Plug; Body Style:Right Angle 42 A, 600 V, N-CHANNEL IGBT
HiPerFASTTM IGBT ISOPLUS247TM (Electrically Isolated Back Surface)
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IT610 |
(IT6xx) ISOTAB TRIACS ELECTRICALLY ISOLATED
|
Hutson Industries
|
| IXGR40N60B |
HiPerFASTTM IGBT (Electrically Isolated Backside)
|
IXYS Corporation
|
| IXGR72N60B3H1 |
GenX3 600VIGBT W/ Diode Electrically Isolated Tab
|
IXYS Corporation
|
| IXSR35N120BD1 |
IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)
|
IXYS Corporation
|
| IXTF1N400 |
High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode
|
IXYS Corporation
|
| ISPLSI2128A-100LQ160 ISPLSI2128A-80LT176 ISPLSI212 |
Electrically-Erasable Complex PLD
Electrically-ErasableComplexPLD
|
|
| ISPLSI2096A-100LT128 ISPLSI2096A-125LT128 ISPLSI20 |
Electrically-Erasable Complex PLD
Electrically-ErasableComplexPLD
|
|
| ATF16V8B-15PC ATF16V8B ATF16V8B-10PC ATF16V8B/BQ/B |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
ATF16V8B/BQ/BQL [Updated 4/01. 19 Pages] 250 gate electrically erasable PLD. 20 pins
From old datasheet system
250 gate electrically erasable PLD, 20 pins
|
Atmel, Corp.
Atmel Corp
|
| PBAS19001BK2 PBAS19003LG2 PBAS19001LG2 PBAS19003BK |
Adaptateur de rails pour montage sur bati de 24 a 19 po
|
Hammond Manufacturing Ltd.
Hammond Manufacturing L...
|
